PART |
Description |
Maker |
AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A |
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF SWITCH Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36 Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
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CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
IDT71V424L IDT71V424S10PH IDT71V424S10PHG IDT71V42 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) 512K X 8 STANDARD SRAM, 15 ns, PDSO44 TRANS NPN W/RES 60 HFE NS-B1 512K X 8 STANDARD SRAM, 10 ns, PDSO36 TRANS NPN W/RES 80 HFE NS-B1 3.3V 512K x 8 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
AT68166FT-YM17-E AT68166FT-YM25SV |
512K X 32 STANDARD SRAM, 17 ns, CQFP68 0.950 INCH, CERAMIC, QFP-68 512K X 32 STANDARD SRAM, 25 ns, CQFP68
|
Atmel, Corp. ATMEL CORP
|
K6T4008V1C-YB70 K6T4008U1C-MB85 K6T4008U1C-MB10 K6 |
512K X 8 STANDARD SRAM, 70 ns, PDSO32 8 X 13.40 MM, STSOP1-32 512K X 8 STANDARD SRAM, 85 ns, PDSO32 512K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Bourns, Inc.
|
CY7C1383C-117BGC CY7C1383C-100AC CY7C1383C-100BZI |
18-Mb (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 STANDARD SRAM, 8.5 ns, PQFP100 18-Mb (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 STANDARD SRAM, 8.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS78116AGB-8I GS78116AB-10 GS78116AB-10I GS78116AB |
512K X 16 STANDARD SRAM, 10 ns, PBGA119 512K x 16 8Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
AS5C4008F-17E/IT AS5C4008F-17E/XT AS5C4008F-17E/88 |
512K X 8 STANDARD SRAM, 17 ns, CDFP32 CERAMIC, FP-32 512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, LCC-32
|
Micross Components Austin Semiconductor, Inc
|
CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器(为512k × 3600万18 CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
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http:// Yuasa Battery, Inc. Integrated Circuit Technology Corp Microsemi, Corp. Sony, Corp. Sony Corporation
|
CY62157EV18LL-55BVXI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor, Corp.
|
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